sd101aws-v, sd101bws-v, sd101cws-v document number 85680 rev. 1.7, 05-aug-10 vishay semiconductors www.vishay.com 1 20145 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diodes features ? for general purpose applications ? the sd101 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring ? the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications ? these diodes are also available in the mini-melf case with type designations ll101a to ll101c, in the do-35 case with type- designations sd101a to sd101c and in the sod-123 case with type designations sd101aw-v to sd101cw-v. ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-323 weight: approx. 4.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature part ordering code type marking remarks sd101aws-v sd101aws-v-gs18 or sd101aws-v-gs08 sa tape and reel sd101bws-v sd101bws-v-gs18 or sd101bws-v-gs08 sb tape and reel sd101cws-v sd101cws-v-gs18 or sd101cws-v-gs08 sc tape and reel parameter test condition part symbol value unit peak inverse voltage sd101aws-v v rrm 60 v sd101bws-v v rrm 50 v sd101cws-v v rrm 40 v power dissipation (infinite heat sink) p tot 150 1) mw forward continuous current i f 30 ma maximum single cycle surge 10 s square wave i fsm 2a
www.vishay.com 2 document number 85680 rev. 1.7, 05-aug-10 sd101aws-v, sd101bws-v, vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit thermal resistance junction to ambient air r thja 650 1) k/w junction temperature t j 125 1) c storage temperature range t stg - 65 to + 150 c parameter test condition part symbol min ty p. max unit reverse breakdown voltage i r = 10 a sd101aws-v v (br) 60 v sd101bws-v v (br) 50 v sd101cws-v v (br) 40 v leakage current v r = 50 v sd101aws-v i r 200 na v r = 40 v sd101bws-v i r 200 na v r = 30 v sd101cws-v i r 200 na forward voltage drop i f = 1 ma sd101aws-v v f 410 mv sd101bws-v v f 400 mv sd101cws-v v f 390 mv i f = 15 ma sd101aws-v v f 1000 mv sd101bws-v v f 950 mv sd101cws-v v f 900 mv junction capacitance v r = 0 v, f = 1 mhz sd101aws-v c d 2.0 ns sd101bws-v c d 2.1 ns sd101cws-v c d 2.2 ns reverse recovery time i f = i r = 5 ma, recover to 0.1 i r t rr 1ns figure 1. typical variation of forward current vs. forward voltage 0.01 0.1 1 10 0 0.4 0.6 0. 8 1.0 0.2 a b c i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 1 8 477 figure 2. typical forward conduction curve a b c 0 0.4 0.6 0. 8 1.0 0.2 60 20 8 0 40 0 100 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 1 8 47 8
sd101aws-v, sd101bws-v, document number 85680 rev. 1.7, 05-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sod-323 figure 3. typical variation of reverse current at various temperatures 100 10 1 0.1 0.01 10 20 30 40 050 75 c 50 c 25 c 125 c 100 c v r -re v erse v oltage ( v ) i-re v erse c u rrent ( a) r 1 8 479 figure 4. typical capacitance curve as a function of reverse voltage 1 8 4 8 0 10 20 30 40 0 0 1.0 1.2 1.4 1.6 1. 8 2.0 0.6 0. 8 0.2 0.4 50 t j = 25 c c b a c - typical capacitance (pf) d v r -re v erse v oltage ( v ) foot print recommendation: rev. 5 - date: 23.sept.2009 17443 document no.:s8-v-3910.02-001 (4) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.10 (0.004) cathode bar 0.20 (0.008) 0.40 (0.016) 2.50 (0.098) 1.1 (0.043) 1.5 (0.059) 2.85 (0.112) 1.60 (0.063) 1.95 (0.077) 0.15 (0.006) 0.1 (0.004) max. 1.15 (0.045) 0.8 (0.031) created - date: 24.august.2004 0.40 (0.016) 0.25 (0.010) 0.2 (0.008) 0 to 8
www.vishay.com for technical questions , contact: emi-filter@vishay.com document number: 84018 24 rev. 1.3, 12-jan-07 sod323 vishay semiconductors package dimensions in millimeters (inches) created - date: 24. a u g u st. 2004 re v . 04 - date: 23. sep .2009 doc u ment no.: s 8 - v -3910.02-001 (4) 17443 0.1 (0.004) max. 1.95 (0.077) 1.60 (0.063) 2. 8 5 (0.112) 1.5 (0.059) 1.1 (0.043) mo u nting pad layo u t 2.50 (0.09 8 ) 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) 0.40 (0.016) 0.20 (0.00 8 ) cathode b ar 0.10 (0.004) 0.15 (0.006) 1.15 (0.045) 0. 8 (0.031) 0.40 (0.016) 0.25 (0.010) 0.2 (0.00 8 ) 0 - 8
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